Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors

Author: Orlov L.   Drozdov Yu.   Shevtsov V.   Bozhenkin V.   Vdovin V.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7834

Source: Physics of the Solid State, Vol.49, Iss.4, 2007-04, pp. : 627-633

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