Related content

Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition

By  

Journal of Physics: Conference Series , Vol. 541, Iss. 1, 2014-10 ,pp. : 151-155

IOP Publishing

Access to resources Recommend Favorite

In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

By Yi-Bin Yang   Ming-Gang Liu   Wei-Jie Chen   Xiao-Biao Han   Jie Chen   Xiu-Qi Lin   Jia-Li Lin   Hui Luo   Qiang Liao   Wen-Jie Zang   Yin-Song Chen   Yun-Ling Qiu   Zhi-Sheng Wu   Yang Liu   Bai-Jun Zhang  

Chinese Physics B, Vol. 24, Iss. 9, 2015-09 ,pp. : 96103-96107

IOP Publishing

Access to resources Recommend Favorite

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

By He Yang   Cheng-Min Shen   Yuan Tian   Gao-Qiang Wang   Shao-Xiong Lin   Yi Zhang   Chang-Zhi Gu   Jun-Jie Li   Hong-Jun Gao  

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 96803-96807

IOP Publishing

Access to resources Recommend Favorite

Morphology of heteroepitaxial β-SiC films grown on Si(111) through high-vacuum chemical vapor deposition from hexane vapors

By Orlov L.   Drozdov Yu.   Shevtsov V.   Bozhenkin V.   Vdovin V.  

Physics of the Solid State, Vol. 49, Iss. 4, 2007-04 ,pp. : 627-633

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Improved crystal quality of GaN film with the in-plane lattice-matched In_0.17Al_0.83N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

By Liang Li   Lin-An Yang   Jun-Shuai Xue   Rong-Tao Cao   Sheng-Rui Xu   Jin-Cheng Zhang   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 67103-67108

IOP Publishing

Access to resources Recommend Favorite