Influence of defects on the temperature dependence of the density of electrons in the two-dimensional and doped channels of selectively doped AlxGa1−x As/GaAs heterostructures

Author： Dmitriev S.   Spiridonov K.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.43, Iss.10, 1998-10, pp. : 1266-1268

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Monte Carlo calculation of the low-temperature mobility of two-dimensional electrons in a quantum well in a selectively doped GaAs-based heterostructure

By Borzdov V.   Mulyarchik S.   Khomich A.  

Technical Physics Letters, Vol. 23, Iss. 12, 1997-12 ,pp. : 935-937

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

INFLUENCE OF MBE GROWTH CONDITIONS ON THE PROPERTIES OF AlxGa1-xAs/GaAs HETEROSTRUCTURES

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-209-C5-220

Edp Sciences

Access to resources Recommend Favorite

Hydrostatic-pressure-induced Γ-X mixing in delta-doped AlxGa1-xAs

By  

Journal of Physics: Conference Series , Vol. 167, Iss. 1, 2009-05 ,pp. : 144-148

IOP Publishing

Access to resources Recommend Favorite

Drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x As heterostructures in high electric fields

By Požela J.   Požela K.   Raguotis R.   Jucienė V.  

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 761-765

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Piezoelectric effect and the long-term resistance relaxations induced by uniaxial compression in p-GaAs/AlxGa1−x as heterostructures

By Kravchenko V.   Minina N.   Savin A.   Hansen O.  

Journal of Experimental and Theoretical Physics, Vol. 91, Iss. 6, 2000-12 ,pp. : 1250-1260

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite