Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

Author： Bessolov V. Zhilyaev Yu. Konenkova E. Lebedev M.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.43, Iss.8, 1998-08, pp. : 983-985

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Hydrogen chemisorption on III-V semiconductor surfaces

By Nannarone S. Pedio M.

Surface Science Reports, Vol. 51, Iss. 1, 2003-09 ,pp. : 1-149

Elsevier

Access to resources Recommend Favorite

STRUCTURE OF CLEAN III-V SEMICONDUCTOR SURFACES

Le Journal de Physique Colloques, Vol. 50, Iss. C7, 1989-10 ,pp. : C7-119-C7-128

Edp Sciences

Access to resources Recommend Favorite

Passivation des semiconducteurs III-V

Revue de Physique Appliquée (Paris), Vol. 25, Iss. 9, 1990-09 ,pp. : 895-914

Edp Sciences

Access to resources Recommend Favorite

Chemical effects during formation of the electronic surface structure of III–V semiconductors in a sulfide solution

By Bessolov V. Konenkova E. Lebedev M. Zahn D.

Physics of the Solid State, Vol. 41, Iss. 5, 1999-05 ,pp. : 793-795

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-13-C5-19

Edp Sciences

Access to resources Recommend Favorite