Hydrogen chemisorption on III-V semiconductor surfaces

Publisher： Elsevier

ISSN： 0167-5729

Source： Surface Science Reports, Vol.51, Iss.1, 2003-09, pp. : 1-149

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

STRUCTURE OF CLEAN III-V SEMICONDUCTOR SURFACES

Le Journal de Physique Colloques, Vol. 50, Iss. C7, 1989-10 ,pp. : C7-119-C7-128

Edp Sciences

Access to resources Recommend Favorite

Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

By Bessolov V. Zhilyaev Yu. Konenkova E. Lebedev M.

Technical Physics, Vol. 43, Iss. 8, 1998-08 ,pp. : 983-985

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-13-C5-19

Edp Sciences

Access to resources Recommend Favorite

Surface energy and crystal structure of nanowhiskers of III–V semiconductor compounds

By Sibirev N. Timofeeva M. Bol’shakov A. Nazarenko M. Dubrovski V.

Physics of the Solid State, Vol. 52, Iss. 7, 2010-07 ,pp. : 1531-1538

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of magneto-induced diffusion instability in III–V semiconductor compounds

By Levin M. Semenova G. Sushkova T.

Doklady Physics, Vol. 48, Iss. 2, 2003-02 ,pp. : 62-64

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite