Effect of dipole structures on field emission of wide-gap semiconductor emitters

Author： Baskin L.   Neittaanmäki P.   Plamenevskii B.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.55, Iss.12, 2010-12, pp. : 1793-1796

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

The effect of dynamical Bloch oscillations on optical-field-induced current in a wide-gap dielectric

By  

New Journal of Physics, Vol. 15, Iss. 6, 2013-06 ,pp. : 290-304

IOP Publishing

Access to resources Recommend Favorite

Mechanism of ion loading of point emitters in planar edge field emission structures

By Aban’shin N.   Gorfinkel’ B.   Yakunin A.  

Technical Physics Letters, Vol. 32, Iss. 10, 2006-10 ,pp. : 892-895

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

By Kukushkin S A   Osipov A V  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 31, 2014-08 ,pp. : 313001-313041

IOP Publishing

Access to resources Recommend Favorite

High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor

By Hushur Anwar   Manghnani Murli H   Werheit Helmut   Dera Przemyslaw   Williams Quentin  

Journal of Physics: Condensed Matter, Vol. 28, Iss. 4, 2016-02 ,pp. : 45403-45414

IOP Publishing

Access to resources Recommend Favorite

On the degree to which the wide-gap part of a p-n heterojunction influences the breakdown field and the carrier multiplication coefficients

By Kholodnov V.   Kurochkin N.  

Technical Physics Letters, Vol. 24, Iss. 9, 1998-09 ,pp. : 668-670

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite