Possible method of reducing annealing temperatures of radiation defects in ion-implanted silicon carbide

Author： Dzhibuti Z.   Dolidze N.   Narsiya G.   Éristavi G.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.10, 1997-10, pp. : 746-747

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