Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

Author： Chelyadinskii A.   Varichenko V.   Zaitsev A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.40, Iss.9, 1998-09, pp. : 1478-1481

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