Dependence of electron and hole lifetimes on the majority recombination impurity concentration in the presence of auxiliary carrier trapping centers

Author： Kholodnov V.   Serebrennikov P.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.12, 1997-12, pp. : 969-971

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