Related content

The influence of excited states ofdeep dopants on majority-carrier concentration in a wide-bandgapsemiconductor

By  

New Journal of Physics, Vol. 4, Iss. 1, 2002-03 ,pp. : 180-194

IOP Publishing

Access to resources Recommend Favorite

Depth profiles of the majority carrier concentration and the minority carrier effective lifetime in gettered GaAs

By Andrievskii V.   Gorelenok A.   Zagorel’skaya N.   Kamanin A.   Shmidt N.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1013-1015

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Dependence of electron and hole lifetimes on the majority recombination impurity concentration in the presence of auxiliary carrier trapping centers

By Kholodnov V.   Serebrennikov P.  

Technical Physics Letters, Vol. 23, Iss. 12, 1997-12 ,pp. : 969-971

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL

By  

Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. : C6-57-C6-62

Edp Sciences

Access to resources Recommend Favorite

Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy

By Calandrini Eugenio   Ortolani Michele   Nucara Alessandro   Scappucci Giordano   Klesse Wolfgang M   Simmons Michelle Y   Sabbagh Diego   Capellini Giovanni   Virgilio Michele   Baldassarre Leonetta      

Journal of Optics, Vol. 16, Iss. 9, 2014-09 ,pp. : 94010-94016

IOP Publishing

Access to resources Recommend Favorite