Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

Author： Mamutin V.   Zhmerik V.   Shubina T.   Toropov A.   Lebedev A.   Vekshin V.   Ivanov S.   Kop’ev P.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.24, Iss.6, 1998-06, pp. : 467-469

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