Investigation of the entrainment of silicon atoms by “vacancies” formed in an aluminum melt when its surface is exposed to an ion-electron flux

Author： Kolpakov V.   Kolpakov A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.25, Iss.8, 1999-08, pp. : 618-620

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