Related content

Er³⁺ ion electroluminescence of p ⁺-Si/n-Si: Er/n ⁺-Si diode structure under breakdown conditions

By Shmagin V.   Remizov D.   Obolenskii S.   Kryzhkov D.   Drozdov M.   Krasil’nik Z.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 125-128

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)₃*DME, emitting at 1.54 μm

By Voronkov V.   Golubev V.   Gorshkov N.   Medvedev A.   Pevtsov A.   Suglobov D.   Feoktistov N.  

Technical Physics Letters, Vol. 24, Iss. 7, 1998-07 ,pp. : 502-503

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

New type of photoelectric converter based on an n-CdO/a-C/p-Si heterostructure

By Baranov A.   Malov Yu.   Tereshin S.  

Technical Physics Letters, Vol. 23, Iss. 11, 1997-11 ,pp. : 817-819

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of the p-n junction breakdown mechanism on the Er³⁺ ion electroluminescence intensity and excitation efficiency in Si: Er epitaxial layers grown through sublimation molecular beam epitaxy

By Shmagin V.   Remizov D.   Krasil’nik Z.   Kuznetsov V.   Shabanov V.   Krasil’nikova L.   Kryzhkov D.   Drozdov M.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 109-112

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

By Lebedev A.   Mosina G.   Nikitina I.   Savkina N.   Sorokin L.   Tregubova A.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1052-1054

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite