Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

Author： Lebedev A. Abramov P. Zubrilov A. Bogdanova E. Lebedev S. Seredova N. Tregubova A.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.36, Iss.6, 2010-06, pp. : 574-576

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