Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|212|12|2928-2935

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.12, 2015-12, pp. : 2928-2935

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