Using vertical capacitance–voltage measurements for fast on‐wafer characterization of epitaxial GaN‐on‐Si material

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|212|12|2897-2902

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.12, 2015-12, pp. : 2897-2902

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Abstract