Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material

Author: Liu J-W   Liao M-Y   Imura M   Watanabe E   Oosato H   Koide Y  

Publisher: IOP Publishing

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.47, Iss.24, 2014-06, pp. : 245102-245106

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next