Related content

Surge current capabilities and isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

By Palmour J W   Levinshtein M E   Ivanov P A   Zhang Q J  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 23, 2015-06 ,pp. : 235103-235107

IOP Publishing

Access to resources Recommend Favorite

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H—SiC contacts

By  

Chinese Physics B, Vol. 23, Iss. 12, 2014-12 ,pp. : 127302-127306

IOP Publishing

Access to resources Recommend Favorite

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

By Hao Yuan   Xiao-Yan Tang   Yi-Men Zhang   Yu-Ming Zhang   Qing-Wen Song   Fei Yang   Hao Wu  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57102-57105

IOP Publishing

Access to resources Recommend Favorite

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

By Xiang-Dong Wang   Xiao-Chuan Deng   Yong-Wei Wang   Yong Wang   Yi Wen   Bo Zhang  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57203-57207

IOP Publishing

Access to resources Recommend Favorite

Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

By TanrıkuluE E   YıldızD E   GünenA   AltındalŞ  

Physica Scripta, Vol. 90, Iss. 9, 2015-09 ,pp. : 95801-95807

IOP Publishing

Access to resources Recommend Favorite