The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer

Author: Jian-Xin Lu   Xin Ou   Xue-Xin Lan   Zheng-Yi Cao   Xiao-Jie Liu   Wei Lu   Chang-Jie Gong   Bo Xu   Ai-Dong Li   Yi-Dong Xia   Jiang Yin   Zhi-Guo Liu  

Publisher: IOP Publishing

ISSN: 0256-307X

Source: Chinese Physics Letters, Vol.31, Iss.2, 2014-02, pp. : 28503-28505

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next