Comparison of Fluorinated HfO₂ and Si₃N₄ Charge Trapping Layer for Nonvolatile Flash Memories

Author： Chen Yung-Yu Lei Gen Shen Yu-Jie Lin Shin-Chieh Chen Yih-Chien

ISSN： 0015-0193

Source： Ferroelectrics, Vol.435, Iss.1, 2012-01, pp. : 38-45

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