Related content

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

By  

Journal of Physics: Conference Series , Vol. 541, Iss. 1, 2014-10 ,pp. : 435-438

IOP Publishing

Access to resources Recommend Favorite

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

By  

Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 216-219

IOP Publishing

Access to resources Recommend Favorite

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

By Kladko V.   Kuchuk A.   Safriuk N.   Machulin V.   Belyaev A.   Konakova R.   Yavich B.   Ber B.   Kazantsev D.  

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 753-760

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

By Ming-Ming Liang   Guo-En Weng   Jiang-Yong Zhang   Xiao-Mei Cai   Xue-Qin Lü   Lei-Ying Ying   Bao-Ping Zhang  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 54211-54215

IOP Publishing

Access to resources Recommend Favorite

Effects of the annealing temperature on the structural and electronic properties of MBE grown InGaN/GaN quantum wells

By  

Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. : 117-120

IOP Publishing

Access to resources Recommend Favorite