Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

Author： Kladko V. Kuchuk A. Safriuk N. Machulin V. Belyaev A. Konakova R. Yavich B. Ber B. Kazantsev D.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 753-760

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