Electrical and structural characterization of nitrogen doped ZnO layers grown at low temperature by atomic layer deposition

Author： Kolkovsky Vl Snigurenko D Jakiela R Guziewicz E

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.8, 2014-06, pp. : 85006-85011

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Atomic layer deposition of ZnO: a review

By Tynell Tommi Karppinen Maarit

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 43001-43015

IOP Publishing

Access to resources Recommend Favorite

Microwave annealing effects on ZnO films deposited by atomic layer deposition

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 112001-112004

IOP Publishing

Access to resources Recommend Favorite

Effects of the Al₂O₃ interlayer in ZnO thin-film transistors fabricated via atomic layer deposition

By Kim Seong-Hyeon Jeong Kwang-Seok Lee Ga-Won Lee Hi-Deok

Journal of Information Display, Vol. 14, Iss. 2, 2013-06 ,pp. : 61-65

Taylor & Francis Ltd

Access to resources Recommend Favorite

Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature

By Jang Cholho Zhizhen Ye Jianguo Lü

Journal of Semiconductors, Vol. 36, Iss. 12, 2015-12 ,pp. : 123003-123006

IOP Publishing

Access to resources Recommend Favorite

Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

By Scott Robin

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 419-428

Springer Publishing Company

Access to resources Recommend Favorite