Interplay of the doped Ge atoms and the N vacancies with the negative thermal expansion of M3(Cu1−x Ge x )N1−y

Author： Qu B.   He H.   Pan B.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.114, Iss.3, 2014-03, pp. : 785-791

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Elastic and Thermal Properties of Double Doped Orthovanadate: Eu1−x (La0.254Y0.746) x VO3

By Parveen Atahar   Gaur N.  

Journal of Low Temperature Physics, Vol. 173, Iss. 5-6, 2013-12 ,pp. : 227-238

Springer Publishing Company

Access to resources Recommend Favorite

The dependence of photosensitivity on composition for thin films of Ge x As y Se1–x–y chalcogenide glasses

By Su Xueqiong   Wang Rongping   Luther-Davies Barry   Wang Li  

Applied Physics A, Vol. 113, Iss. 3, 2013-11 ,pp. : 575-581

Springer Publishing Company

Access to resources Recommend Favorite

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

By Xu J.   Zou X.   Li C.   Lai P.   Chan C.  

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 419-422

Springer Publishing Company

Access to resources Recommend Favorite

K 0 of hypersurfaces defined by x 1 2 + ... + x n 2 = ±1

By Keshari Manoj  

Indian Journal of Pure and Applied Mathematics, Vol. 44, Iss. 2, 2013-04 ,pp. : 119-129

Springer Publishing Company

Access to resources Recommend Favorite

The exponential Lebesgue-Nagell equation X 2 + P 2m = Y n

By Xiaowei Pan  

Periodica Mathematica Hungarica, Vol. 67, Iss. 2, 2013-12 ,pp. : 231-242

Springer Publishing Company

Access to resources Recommend Favorite