Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Author： Xu J.   Zou X.   Li C.   Lai P.   Chan C.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.94, Iss.2, 2009-02, pp. : 419-422

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Interplay of the doped Ge atoms and the N vacancies with the negative thermal expansion of M3(Cu1−x Ge x )N1−y

By Qu B.   He H.   Pan B.  

Applied Physics A, Vol. 114, Iss. 3, 2014-03 ,pp. : 785-791

Springer Publishing Company

Access to resources Recommend Favorite

The dependence of photosensitivity on composition for thin films of Ge x As y Se1–x–y chalcogenide glasses

By Su Xueqiong   Wang Rongping   Luther-Davies Barry   Wang Li  

Applied Physics A, Vol. 113, Iss. 3, 2013-11 ,pp. : 575-581

Springer Publishing Company

Access to resources Recommend Favorite

The Structural and Magnetic Properties of Zn 0.8−4x Dy x O y (0.05≤ x ≤0.10) Compounds Prepared by Solid-State Reactions

By Akyol Mustafa  

Journal of Superconductivity and Novel Magnetism, Vol. 26, Iss. 7, 2013-07 ,pp. : 2439-2445

Springer Publishing Company

Access to resources Recommend Favorite

Electrical properties of stacked gate dielectric (SiO 2 /ZrO 2 ) deposited on strained SiGe layers

By Chatterjee S.   Samanta S.K.   Banerjee H.D.   Maiti C.K.  

Thin Solid Films, Vol. 422, Iss. 1, 2002-12 ,pp. : 33-38

Elsevier

Access to resources Recommend Favorite

Influence of Quenched Disorder on the Structural Properties and Spin-Wave Excitations in Ferromagnetic Metallic Manganites (La1−x Nd x )2/3(Ca1−y Sr y )1/3MnO3

By Khelifi J.   Tozri A.   Dhahri E.   Hlil E.  

Journal of Superconductivity and Novel Magnetism, Vol. 26, Iss. 10, 2013-10 ,pp. : 3133-3141

Springer Publishing Company

Access to resources Recommend Favorite