Surface passivation of composition graded base in GaAlAs/GaInP/GaAsheterojunction bipolar transistor

Author： Bourguiga R. Sik H. Scavennec A.

E-ISSN： 1286-0050|6|3|299-301

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.6, Iss.3, 2010-03, pp. : 299-301

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

By Bourguiga R. Sik H. Scavennec A.

EPJ Applied Physics (The), Vol. 4, Iss. 1, 2010-03 ,pp. : 27-29

Edp Sciences

Access to resources Recommend Favorite

Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit

By Bourguiga R. Oudir A. Mahdouani M. Pardo F. Pelouard J. L.

EPJ Applied Physics (The), Vol. 42, Iss. 3, 2008-04 ,pp. : 177-186

Edp Sciences

Access to resources Recommend Favorite

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

By Qu Shenqi Wang Xiaoliang Xiao Hongling Wang Cuimei Jiang Lijuan Feng Chun Chen Hong Yin Haibo Peng Enchao Kang He Wang Zhanguo Hou Xun

EPJ Applied Physics (The), Vol. 66, Iss. 2, 2014-06 ,pp. : 20101-20101

Edp Sciences

Access to resources Recommend Favorite

InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic doped-channel layer

By Tsai J.-H. Lee Y.-H. Dale N.-F. Lour W.-S.

EPJ Applied Physics (The), Vol. 48, Iss. 2, 2009-10 ,pp. : 20303-20303

Edp Sciences

Access to resources Recommend Favorite

Effect of the p⁺-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers

By Pommiès M. Avella M. Patriarche G. Bettiati M. Hallais G. Jiménez J.

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 465-468

Edp Sciences

Access to resources Recommend Favorite