Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

Author： Bourguiga R.   Sik H.   Scavennec A.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|4|1|27-29

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.4, Iss.1, 2010-03, pp. : 27-29

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