Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

Author： Klinger D.   Auleytner J.   Żymierska D.   Kozankiewicz B.   Barcz A.   Nowicki L.   Stonert A.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|27|1-3|149-153

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 149-153

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