Helium behaviour in implanted boron carbide

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EPJ Nuclear Sciences & Technologies, Vol. 1, Iss. issue, 2015-12 ,pp. : 16-16

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The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects*

By Kaabi L.   Ben Brahim J.   Remaki B.   Gontrand C.   El Omari H.   Bureau J.-C.   Sassi Z.   Balland B.  

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Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing

By Jung W.   Kaniewska M.   Misiuk A.   Londos C. A.  

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Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing

By Klinger D.   Auleytner J.   Żymierska D.   Kozankiewicz B.   Barcz A.   Nowicki L.   Stonert A.  

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Defects in SiC substrates and epitaxial layers affecting semiconductor device performance

By Müller St. G.   Sumakeris J. J.   Brady M. F.   Glass R. C.   Hobgood H. McD.   Jenny J. R.   Leonard R.   Malta D. P.   Paisley M. J.   Powell A. R.   Tsvetkov V. F.   Allen S. T.   Das M. K.   Palmour J. W.   Carter C. H.  

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