Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges

Author: Bedjaoui M.   Despax B.   Caumont M.   Bonafos C.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|34|2|147-150

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.34, Iss.2, 2006-05, pp. : 147-150

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