Depth profiling of P shallow implants in silicon by electron-inducedX-ray emission spectroscopy

Author: Hombourger Ch.   Jonnard Ph.   Bonnelle Ch.   Staub P.-F.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|24|2|115-119

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.24, Iss.2, 2003-10, pp. : 115-119

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Abstract