Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Author: Mosca M.   Castiglia A.   Bühlmann H.-J.   Dorsaz J.   Feltin E.   Carlin J.-F.   Grandjean N.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|43|1|51-53

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.43, Iss.1, 2008-06, pp. : 51-53

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Abstract