Structural characterisation of $(11{\bar 2}0)$ 4H-SiC substrates bycathodoluminescence and X-ray topography

Author: Hidalgo P.   Ottaviani L.   Idrissi H.   Lancin M.   Martinuzzi S.   Pichaud B.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|231-233

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 231-233

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Abstract