Structural and electrical characterization of n⁺-type ion-implanted 6H-SiC

By Goghero D.   Giannazzo F.   Raineri V.   Musumeci P.   Calcagno L.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 239-242

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Dislocations in 6H-SiC and their influence on electrical propertiesof n-type crystals*

By Tillay V.   Pailloux F.   Denanot M. F.   Pirouz P.   Rabier J.   Demenet J. L.   Barbot J. F.  

EPJ Applied Physics (The), Vol. 2, Iss. 2, 2010-03 ,pp. : 111-115

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Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy

By El Harrouni I.   Bluet J.-M.   Ziane D.   Sartel C.   Guillot G.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 235-238

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Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry

By Losurdo M.   Giangregorio M. M.   Capezzuto P.   Bruno G.   Kim T.-H.   Choi S.   Brown A.  

EPJ Applied Physics (The), Vol. 31, Iss. 3, 2005-09 ,pp. : 159-164

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Impact ionization coefficients of 4H- and 6H-SiC

By Sun C.C.   You A.H.   Wong E.K.  

EPJ Applied Physics (The), Vol. 60, Iss. 1, 2012-10 ,pp. : 10204-10204

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