Annealing of radiation damage in MOS devices: Study by diode parameter determination

Author: Bendada E.   Raïs K.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|5|1|91-94

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.5, Iss.1, 2010-03, pp. : 91-94

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Abstract