Comment on ‘Germanium electron–hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate’

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|12|128001-128003

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.12, 2015-12, pp. : 128001-128003

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