An advanced tunnel oxide layer process for 65 nm NOR floating-gate flash memories

Author: Chiu Shengfen   Xu Yue   Ji Xiaoli   Liao Yiming   Wu Fuwei   Yan Feng  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|10|105032-105037

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.10, 2015-10, pp. : 105032-105037

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract