Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers

Author： Yu J.S.   Song J.D.   Kim J.M.   Lee Y.T.   Lim H.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.78, Iss.1, 2004-01, pp. : 113-117

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well

By Gunes Mustafa   Gumus Cebrail  

Philosophical Magazine, Vol. 94, Iss. 24, 2014-08 ,pp. : 2804-2811

Taylor & Francis Ltd

Access to resources Recommend Favorite

On the island nucleation process in LPOMVPE In 0.2 Ga 0.8 As/GaAs multilayers grown on GaAs and AlAs buffers

By Gartstein E.   Mogilyanski D.   Golan R.   Fekete D.  

Thin Solid Films, Vol. 424, Iss. 1, 2003-01 ,pp. : 15-22

Elsevier

Access to resources Recommend Favorite

Segregation in In x Ga 1− x As/GaAs Stranski–Krastanow layers grown by metal–organic chemical vapour deposition

By Piscopiello E.  

Philosophical Magazine, Vol. 85, Iss. 32, 2005-11 ,pp. : 3857-3870

Taylor & Francis Ltd

Access to resources Recommend Favorite

High resolution diffraction and DLTS investigation results of the epitaxial Ga 1-x Al x As/GaAs layers produced with the MOCVD method

By Czekala-Mukalled Z.   Kunminski S.   Placzek-Popko E.   Szatkowski J.   Kozlowski J.   Jedral L.  

Vacuum, Vol. 48, Iss. 3, 1997-03 ,pp. : 269-271

Elsevier

Access to resources Recommend Favorite

Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer

By Eftekhari G.  

Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 110-115

Elsevier

Access to resources Recommend Favorite