Photocurrent measurements on GaAs 1-x N x epilayers grown by metalorganic chemical vapor deposition

By Kim T.S.   Cuong T.V.   Park C.S.   Park J.Y.   Lee H.J.   Suh E.-K.   Hong C.-H.  

Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 336-342

Elsevier

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Magnetotransport and electric subband studies of Si-delta-doped Al 0.27 Ga 0.73 As/GaAs single quantum wells grown by metalorganic chemical vapour deposition

By Kim T.W.   Kim Y.   Min S.-K.  

Thin Solid Films, Vol. 254, Iss. 1, 1995-01 ,pp. : 61-64

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Indium segregation and reevaporation effects on the photoluminescence properties of highly strained In x Ga 1-x As/GaAs quantum wells

By Ilahi B.   Sfaxi L.   Bouzaene L.   Hassen F.   Maaref H.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 232-234

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Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal-organic vapour phase epitaxy

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Philosophical Magazine, Vol. 93, Iss. 23, 2013-08 ,pp. : 3154-3166

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Structural and optical properties of InP/GaAs strained heterostructures grown by metal-organic chemical vapor deposition

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Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 36-39

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