C and Si ion implantation and the origins of yellow luminescence in GaN

Author： Dai L.   Ran G.Z.   Zhang J.C.   Duan X.F.   Lian W.C.   Qin G.G.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.79, Iss.1, 2004-06, pp. : 139-142

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

On micropipes and nanopipes in SiC and GaN

By Pirouz P.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 78, Iss. 3, 1998-09 ,pp. : 727-736

Taylor & Francis Ltd

Access to resources Recommend Favorite

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1162-1169

John Wiley & Sons Inc

Access to resources Recommend Favorite

Reactive ion etching of novel materials-GaN and SiC

By Szczesny A.   Sniecikowski P.   Szmidt J.   Werbowy A.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 249-254

Elsevier

Access to resources Recommend Favorite

HVPE GaN Growth on 4H SiC and Die Dicing

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 1198-1201

Trans Tech Publications

Access to resources Recommend Favorite

Structural and optical properties modification of a-SiC:H by Ga + ion implantation

By Tsvetkova T.   Angelov O.   Sendova-Vassileva M.   Dimova-Malinovska D.   Bischoff L.   Adriaenssens G.J.   Grudzinski W.   Zuk J.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 467-470

Elsevier

Access to resources Recommend Favorite