Related content

Ion implantation induced buried disorder studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

By Lohner T.   Petrik P.   Polgar O.   Khanh N.Q.   Fried M.   Gyulai J.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 487-490

Elsevier

Access to resources Recommend Favorite

Ion implantation-caused damage depth profiles in single-crystalline silicon studied by Spectroscopic Ellipsometry and Rutherford Backscattering Spectrometry

By Petrik P.   Polgar O.   Lohner T.   Fried M.   Khanh N.Q.   Gyulai J.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 293-297

Elsevier

Access to resources Recommend Favorite

Characterization of near surface region of plasma immersion ion-implanted silicon using Rutherford backscattering spectrometry, transmission electron microscopy and spectroscopic ellipsometry

By Shaaban E.R.   Lohner T.   Pinter I.   Petrik P.   Khanh N.Q.   Horvath Z.E.   Gyulai J.  

Vacuum, Vol. 71, Iss. 1, 2003-05 ,pp. : 27-31

Elsevier

Access to resources Recommend Favorite

Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs: A complementary study

By Bouhacina T.   Aime J.P.   Barriere A.S.   Guegan H.   Grandjean N.   Massies J.  

Thin Solid Films, Vol. 278, Iss. 1, 1996-05 ,pp. : 155-165

Elsevier

Access to resources Recommend Favorite

Erratum to ''Formation of CrSi 2 studied by Rutherford Backscattering Spectrometry'' [Vacuum 45(4) 421-422]

By Tobbeche S.   Khalfaoui R.   Benazzouz C.   Boussaa N.   Zilabdi M.   Benouatas A.   Boubellou A.   Halimi R.  

Vacuum, Vol. 60, Iss. 3, 2001-03 ,pp. : 369-369

Elsevier

Access to resources Recommend Favorite