Design and Testing of a 1T-1C Dynamic Random Access Memory Cell Utilizing a Ferroelectric Transistor

Author: McCartney Crystal Laws   Mitchell Cody   Hunt Mitchell   Ho Fat D.  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.157, Iss.1, 2014-10, pp. : 1-11

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next