Ultra high voltage MOS controlled 4H-SiC power switching devices

Author： RyuS CapellC Van BruntE JonasC O’LoughlinM ClaytonJ LamK PalaV HullB LemmaY LichtenwalnerD ZhangQ J RichmondJ ButlerP GriderD CasadyJ AllenS PalmourJ HinojosaM TiptonC W ScozzieC

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|8|84001-84007

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.8, 2015-08, pp. : 84001-84007

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