Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

Publisher: Trans Tech Publications

E-ISSN: 1662-8985|2015|1096|22-26

ISSN: 1022-6680

Source: Advanced Materials Research, Vol.2015, Iss.1096, 2015-05, pp. : 22-26

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