Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|741-744

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 741-744

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