0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET

E-ISSN： 1662-9752|2017|897|483-488

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 483-488

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

4.5-kV 20-mΩ.cm² Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 838-841

Trans Tech Publications

Access to resources Recommend Favorite

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm² and High Avalanche Withstanding Capability

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 962-965

Trans Tech Publications

Access to resources Recommend Favorite

Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 741-744

Trans Tech Publications

Access to resources Recommend Favorite

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 505-508

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of 4H-SiC Epitaxial Layers Grown on 2^o Offcut Si-Face Substrates

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 133-136

Trans Tech Publications

Access to resources Recommend Favorite