Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|209-212

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 209-212

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 155-158

Trans Tech Publications

Access to resources Recommend Favorite

Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 89-92

Trans Tech Publications

Access to resources Recommend Favorite

Heteroepitaxy of P-Doped 3C-SiC on Diamond by VLS Transport

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 33-37

Trans Tech Publications

Access to resources Recommend Favorite

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 15-18

Trans Tech Publications

Access to resources Recommend Favorite

Ge Assisted 3C-SiC Nucleation and Growth by Vapour Phase Epitaxy on On-Axis 4H-SiC Substrate

By  

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 27-31

Trans Tech Publications

Access to resources Recommend Favorite