Optimization of the Silicidation and Growth Processes for 3C-SiC Heteroepitaxy on Diamond Substrate

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 155-158

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Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

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Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC

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Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 209-212

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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 63-66

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