![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2014|806|103-107
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 103-107
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Interfacial Disorder of Graphene Grown at High Temperatures on 4H-SiC(000-1)
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :