Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces

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Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 103-107

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Structural and Electrical Characterization of the Initial Stage of Physical Vapor Transport Growth of 4H-SiC Crystals

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 90-95

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Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 53-56

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Optimization of the GaN-buffer growth on 6H-SiC(0001)

By Byun D.   Kum D.-W.   Kim G.   Lim D.   Lee D.   Choi I.-H.   Park D.  

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Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

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